Width-dependent statistical leakage modeling for random dopant induced threshold voltage shift

Authors:
Jie Gu;Sachin S. Sapatnekar;Chris Kim
Affiliations:
University of Minnesota, Minneapolis, MN;University of Minnesota, Minneapolis, MN;University of Minnesota, Minneapolis, MN
Venue:
Proceedings of the 44th annual Design Automation Conference
Year:
2007

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Abstract

Statistical behavior of device leakage and threshold voltage shows a strong width dependency under microscopic random dopant fluctuation. Leakage estimation using the conventional square-root method shows a discrepancy as large as 45% compared to the real case because it fails to model the effective VT shift in the subthreshold region. This paper presents a width-dependent statistical leakage model with an estimation error less than 5%. Design examples on SRAMs and domino circuits demonstrate the significance of the proposed model.