Full-chip leakage analysis in nano-scale technologies: mechanisms, variation sources, and verification

  • Authors:
  • Tao Li;Wenjun Zhang;Zhiping Yu

  • Affiliations:
  • Tsinghua University, Beijing, China;Tsinghua University, Beijing, China;Tsinghua University, Beijing, China

  • Venue:
  • Proceedings of the 45th annual Design Automation Conference
  • Year:
  • 2008

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Abstract

In this paper, a methodology for full-chip leakage analysis based on accurate modeling of different leakage currents in nano-scaled MOSFETs has been developed. Novel process effects have been covered in our statistical model, and a systematic characterization method of leakage-related parameter variations has been proposed. With these two contributions, we present an effective algorithm to address the growing issue of full-chip leakage verification for actual-fabrication circuits. Unlike many traditional approaches that rely on log-Normal approximations, the proposed algorithm applies a quadratic model of the logarithm for the full-chip leakage current and is able to include both Gaussian and Non-Gaussian parameter distributions. Our simulation examples in a 65nm CMOS process demonstrate that the proposed methodology provides more accurate results compared with the previous methods, while achieving orders of magnitude more efficiency than a Monte Carlo analysis.