Semiconductor equations
On a system of nonlinear Boltzmann equations of semiconductor physics
SIAM Journal on Applied Mathematics
Reconstruction of semiconductor doping profile from laser-beam-induced current image
SIAM Journal on Applied Mathematics
A finite difference scheme solving the Boltzmann-Poisson system for semiconductor devices
Journal of Computational Physics
Moment Methods for the Semiconductor Boltzmann Equation on Bounded Position Domains
SIAM Journal on Numerical Analysis
Mathematical Problems in Semiconductor Physics: Lectures Given at the C.I.M.E. Summer School Held in Cetraro, Italy, July 15-22, 1998
Identification of contact regions in semiconductor transistors by level-set methods
Journal of Computational and Applied Mathematics
The inverse source problem based on the radiative transfer equation in optical molecular imaging
Journal of Computational Physics
Journal of Computational Physics
Semiconductor Material and Device Characterization
Semiconductor Material and Device Characterization
Frequency Domain Optical Tomography Based on the Equation of Radiative Transfer
SIAM Journal on Scientific Computing
IBM Journal of Research and Development
On the measurement of impurity atom distributions by the differential capacitance technique
IBM Journal of Research and Development
Optimized Extraction of MOS Model Parameters
IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems
An Efficient and Reliable Approach for Semiconductor Device Parameter Extraction
IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems
| Hi-index | 31.45 |
We investigate numerically an inverse problem related to the Boltzmann-Poisson system of equations for transport of electrons in semiconductor devices. The objective of the (ill-posed) inverse problem is to recover the doping profile of a device, presented as a source function in the mathematical model, from its current-voltage characteristics. To reduce the degree of ill-posedness of the inverse problem, we proposed to parameterize the unknown doping profile function to limit the number of unknowns in the inverse problem. We showed by numerical examples that the reconstruction of a few low moments of the doping profile is possible when relatively accurate time-dependent or time-independent measurements are available, even though the later reconstruction is less accurate than the former. We also compare reconstructions from the Boltzmann-Poisson (BP) model to those from the classical drift-diffusion-Poisson (DDP) model, assuming that measurements are generated with the BP model. We show that the two type of reconstructions can be significantly different in regimes where drift-diffusion-Poisson equation fails to model the physics accurately. However, when noise presented in measured data is high, no difference in the reconstructions can be observed.