Transfer characteristics and high frequency modeling of logic gates using carbon nanotube field effect transistors (CNT-FETs)

Authors:
Jose M. Marulanda;Ashok Srivastava;Ashwani K. Sharma
Affiliations:
Louisiana State University, Baton Rouge, LA;Louisiana State University, Baton Rouge, LA;Kirtland Air Force Base, Albuquerque, NM
Venue:
Proceedings of the 20th annual conference on Integrated circuits and systems design
Year:
2007

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Abstract

In the present work, current model equations from an analytical model for carbon nanotube field effect transistors are utilized to calculate the transfer characteristics of different logic gates such as inverters, NAND gates, and NOR gates. A small signal model has been implemented and the necessary parameters have been calculated to describe the high frequency response for these logic gates. Results show that how different diameters and wrapping angles of carbon nanotubes, determined by the chiral vector (n,m), can change the transfer characteristics, small signal parameters, and high frequency response for devices based on carbon nanotubes.