Matrix Codes: Multiple Bit Upsets Tolerant Method for SRAM Memories

  • Authors:
  • Costas Argyrides;Hamid R. Zarandi;Dhiraj K. Pradhan

  • Affiliations:
  • University of Bristol, UK;Amirkabir University of Technology, Tehran, IRAN;University of Bristol, UK

  • Venue:
  • DFT '07 Proceedings of the 22nd IEEE International Symposium on Defect and Fault-Tolerance in VLSI Systems
  • Year:
  • 2007

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Abstract

This paper presents a high level method called Matrix code to protect SRAM-based memories against multiple bit upsets. The proposed method combines hamming code and parity code to assure the reliability of memory in presence of multiple bit-upsets with low area and performance overhead. The method is evaluated using one million multiple-fault injection experiments; next reliability and MTTF of the protected memories are estimated based on fault injection experiments and several equations. The fault detection/correction coverage are also calculated and compared with previous methods i.e., Reed-Muller and hamming code. The results reveal that the proposed method behaves better than these methods in terms of fault detection and correction of multiple faults regarding to the area overhead