Power supply current detectability of SRAM defects
ATS '95 Proceedings of the 4th Asian Test Symposium
Comparison of Defect Detection Capabilities of Current-Based and Voltage-Based Test Methods
ETW '00 Proceedings of the IEEE European Test Workshop
Comparison of Defect Detection Capabilities of Current-Based and Voltage-Based Test Methods
ETW '00 Proceedings of the IEEE European Test Workshop
Boolean and Current Detection of MOS Transistor with Gate Oxide Short
ITC '01 Proceedings of the 2001 IEEE International Test Conference
QTAG: a standard for test fixture based IDDQ/ISSQ monitors
ITC'94 Proceedings of the 1994 international conference on Test
Development of a class 1 QTAG monitor
ITC'94 Proceedings of the 1994 international conference on Test
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Gate oxide shorts are defects that must be detected to produce high-reliability ICs. These problems will continue as devicesare scaled down and oxide thicknesses are reduced to the 100-? range. Complete detection of gate oxide shorts and other CMOSfailure mechanisms requires measuring the IDD current during the quiescent state after each test vector is applied to theIC. A 100-percent stuck-at fault test set is effective only if each test vector is accompanied by an IDD measurement. Thisarticle examines the need for a fast, sensitive method of measuring IDD during each test vector and discusses problems confrontingCMOS IC designers, test engineers and test instrumentation designers as they work to meet these demands.