Nanowire addressing with randomized-contact decoders
Theoretical Computer Science
Stochastic nanoscale addressing for logic
Proceedings of the 2010 IEEE/ACM International Symposium on Nanoscale Architectures
Analysis of defect tolerance in molecular crossbar electronics
IEEE Transactions on Very Large Scale Integration (VLSI) Systems
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Stochastically assembled nanoscale architectures have the potential to achieve device densities 100 times greater than today's CMOS. A key challenge facing nanotechnologies is controlling parallel sets of nanowires, such as those in crossbars, using a moderate number of mesoscale wires. Three similar methods have been proposed to control NWs using a set of perpendicular mesoscale wires. The first is based on nanowire differentiation during manufacture, the second makes random connections between nanowires and mesoscale wires, and the third, a mask-based approach, interposes high-K dielectric regions between nanowires and mesoscale wires. Each of these addressing schemes involve a stochastic step in their implementation. In this paper we analyze the mask-based approach and show that, when compared to the other two schemes, a large number of mesoscale control wires is necessary for its realization.