Microelectronic circuits, 2nd ed.
Microelectronic circuits, 2nd ed.
Operation and modeling of the MOS transistor
Operation and modeling of the MOS transistor
Microelectronic circuits and devices (2nd ed.)
Microelectronic circuits and devices (2nd ed.)
Microelectronic Circuit Analysis and Design
Microelectronic Circuit Analysis and Design
CMOS Digital Integrated Circuits Analysis & Design
CMOS Digital Integrated Circuits Analysis & Design
Influence of the driver and active load threshold voltage in design of pseudo-NMOS logic
ICC'10 Proceedings of the 14th WSEAS international conference on Circuits
Role of driver and load transistor (MOSFET) parameters on pseudo-NMOS logic design
WSEAS Transactions on Circuits and Systems
| Hi-index | 0.00 |
The aim of this paper is to research the impact of physical parameters which characterize the MOSFET transistors structure on the threshold voltage values and its influence on critical voltage values which characterize digital circuits that contain the MOSFET transistors. The results obtained emphasize the impact of each single physical parameter on the total value of the threshold voltage. By adjusting the values of MOSFET physical parameters the accepted threshold voltage can be achieved. Since the threshold voltage will have influence on critical voltage values which characterise MOS inverters and delay times during transfer logic states between stages, it must be taken into consideration during design phase of logic gates that contain the MOSFET transistors.