Power Dissipation Associated to Internal Effect Transitions in Static CMOS Gates

  • Authors:
  • Alejandro Millan;Jorge Juan;Manuel J. Bellido;David Guerrero;Paulino Ruiz-De-Clavijo;Julian Viejo

  • Affiliations:
  • Grupo ID2 (Investigacion y Desarrollo Digital) ETSI Informatica (Tec. Electronica), Universidad de Sevilla, Sevilla, Spain 41012;Grupo ID2 (Investigacion y Desarrollo Digital) ETSI Informatica (Tec. Electronica), Universidad de Sevilla, Sevilla, Spain 41012;Grupo ID2 (Investigacion y Desarrollo Digital) ETSI Informatica (Tec. Electronica), Universidad de Sevilla, Sevilla, Spain 41012;Grupo ID2 (Investigacion y Desarrollo Digital) ETSI Informatica (Tec. Electronica), Universidad de Sevilla, Sevilla, Spain 41012;Grupo ID2 (Investigacion y Desarrollo Digital) ETSI Informatica (Tec. Electronica), Universidad de Sevilla, Sevilla, Spain 41012;Grupo ID2 (Investigacion y Desarrollo Digital) ETSI Informatica (Tec. Electronica), Universidad de Sevilla, Sevilla, Spain 41012

  • Venue:
  • Integrated Circuit and System Design. Power and Timing Modeling, Optimization and Simulation
  • Year:
  • 2009

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Abstract

Power modeling techniques have traditionally neglected the main part of the energy consumed in the internal nodes of static CMOS gates: the power dissipated by input transitions that do not produce output switching. In this work, we present an experimental set-up that shows that this power component may contribute up to 59% of the total power consumption of a gate in modern technologies. This fact makes very important to include it into any accurate power model.