A new method to improve accuracy of leakage current estimation for transistors with non-rectangular gates due to sub-wavelength lithography effects

Authors:
Kuen-Yu Tsai;Meng-Fu You;Yi-Chang Lu;Philip C. W. Ng
Affiliations:
National Taiwan University, Taipei, Taiwan, R. O. C.;National Taiwan University, Taipei, Taiwan, R. O. C.;National Taiwan University, Taipei, Taiwan, R. O. C.;National Taiwan University, Taipei, Taiwan, R. O. C.
Venue:
Proceedings of the 2008 IEEE/ACM International Conference on Computer-Aided Design
Year:
2008

Citing 4
Cited 1

Convex Optimization

Convex Optimization
Standard cell characterization considering lithography induced variations

Proceedings of the 43rd annual Design Automation Conference
A unified non-rectangular device and circuit simulation model for timing and power

Proceedings of the 2006 IEEE/ACM international conference on Computer-aided design
Modeling and analysis of non-rectangular gate for post-lithography circuit simulation

Proceedings of the 44th annual Design Automation Conference

Total sensitivity based dfm optimization of standard library cells

Proceedings of the 19th international symposium on Physical design

Quantified Score

Hi-index	0.00

Visualization

Abstract

Non-ideal pattern transfer from drawn circuit layout to manufactured nanometer transistors can severely affect electrical characteristics such as drive current, leakage current, and threshold voltage. Obtaining accurate electrical models of non-rectangular transistors due to sub-wavelength lithography effects is indispensable for DFM-aware nanometer IC design. In this paper, TCAD device simulations are utilized to quantify the accuracy of a standard equivalent gate length extraction approach for non-rectangular transistors. It is verified that threshold voltage and current density are non-uniform along the channel width due to narrow-width related edge effects, leading to significant inaccuracy in the sub-threshold region. A new EGL extraction method utilizing location-dependent weighting factors and convex parameter extraction techniques is proposed to account for the current density non-uniformity. Preliminary results verified by TCAD simulations indicate that the accuracy of leakage current estimation for non-rectangular transistors can be significantly improved. The method is readily applicable to calibration with real silicon data.