Thermally-induced soft errors in nanoscale CMOS circuits

  • Authors:
  • H. Li;J. Mundy;W. Patterson;D. Kazazis;A. Zaslavsky;R. I. Bahar

  • Affiliations:
  • Division of Engineering, Brown University, Providence, RI 02912, USA;Division of Engineering, Brown University, Providence, RI 02912, USA;Division of Engineering, Brown University, Providence, RI 02912, USA;Division of Engineering, Brown University, Providence, RI 02912, USA;Division of Engineering, Brown University, Providence, RI 02912, USA;Division of Engineering, Brown University, Providence, RI 02912, USA

  • Venue:
  • NANOARCH '07 Proceedings of the 2007 IEEE International Symposium on Nanoscale Architectures
  • Year:
  • 2007

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Abstract

Electrical noise will play an increasingly critical role in future nanoscale CMOS circuit operation character ized by lower supply voltages VDD and smaller device sizes. Both of these downscaling approaches reduce the margin of immunity to thermal noise, alpha particle strikes, and threshold voltage variations. This paper investigates the noise probability distributions for both equilibrium and non-equilibrium logic states of advanced CMOS flip-flops operated at ultra-low VDD. The theoretical distribution of transition times from one stable operation point to the other stable operation point is also der ived, which is a useful representation of the soft error rate. It is shown that such nanoscale flip-flop designs are extremely sensitive to threshold variations, reducing average failure time to a few days. Monte Carlo simulations are provided to validate the theoretical model and its predictions.