ABRM: adaptive β-ratio modulation for process-tolerant ultradynamic voltage scaling
IEEE Transactions on Very Large Scale Integration (VLSI) Systems
A 1-µW 600-ppm/°C current reference circuit consisting of subthreshold CMOS circuits
IEEE Transactions on Circuits and Systems II: Express Briefs
A 95-nA, 523ppm/°C, 0.6-μW CMOS current reference circuit with subthreshold MOS resistor ladder
Proceedings of the 16th Asia and South Pacific Design Automation Conference
Assessment of structure variation in silicon nanowire FETs and impact on SRAM
Microelectronics Journal
A semiempirical model for wakeup time estimation in power-gated logic clusters
Proceedings of the 49th Annual Design Automation Conference
Microelectronic Engineering
Compact current source models for timing analysis under temperature and body bias variations
IEEE Transactions on Very Large Scale Integration (VLSI) Systems
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Learn the basic properties and designs of modern VLSI devices, as well as the factors affecting performance, with this thoroughly updated second edition. The first edition has been widely adopted as a standard textbook in microelectronics in many major US universities and worldwide. The internationally-renowned authors highlight the intricate interdependencies and subtle tradeoffs between various practically important device parameters, and also provide an in-depth discussion of device scaling and scaling limits of CMOS and bipolar devices. Equations and parameters provided are checked continuously against the reality of silicon data, making the book equally useful in practical transistor design and in the classroom. Every chapter has been updated to include the latest developments, such as MOSFET scale length theory, high-field transport model, and SiGe-base bipolar devices.