Statistical modeling with the PSP MOSFET model

Authors:
X. Li;C. C. McAndrew;W. Wu;S. Chaudhry;J. Victory;G. Gildenblat
Affiliations:
GLOBALFOUNDRIES, Sunnyvale, CA and Arizona State University, Tempe, AZ;Freescale Semiconductor, Tempe, AZ;Arizona State University, Tempe, AZ;Jazz Semiconductor, Newport Beach, CA;Sentinel IC Technologies, Irvine, CA;Arizona State University, Tempe, AZ
Venue:
IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems
Year:
2010

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Abstract

PSP and the backward propagation of variance (BPV) method are used to characterize the statistical variations of metal-oxide-semiconductor field effect transistors (MOSFETs). BPV statistical modeling of NMOS and PMOS devices is, for the first time, coupled by including self-consistent modeling of ring oscillator gate delays. Parasitic capacitances are included in the analysis. The proposed technique is validated using Monte-Carlo simulations and by comparison to experimental data from two technologies.