An adaptive code rate EDAC scheme for random access memory

Authors:
Ching-Yi Chen;Cheng-Wen Wu
Affiliations:
National Tsing Hua University, Hsinchu, Taiwan;National Tsing Hua University, Hsinchu, Taiwan
Venue:
Proceedings of the Conference on Design, Automation and Test in Europe
Year:
2010

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Abstract

As the VLSI technology scaling continues and the device dimension keeps shrinking, memories are more and more sensitive to soft errors. Memory cores usually occupy a large portion of an SOC and have significant impact on the chip reliability. Therefore error detection and correction (EDAC) techniques are commonly used for protecting the system against soft errors. This paper presents a novel EDAC scheme, which provides adaptive code rate for random access memories (RAMs). Under a certain reliability restriction, the proposed design allows more error bits than a conventional EDAC design.