Power and reliability management of SoCs
IEEE Transactions on Very Large Scale Integration (VLSI) Systems
3D stacked power distribution considering substrate coupling
ICCD'09 Proceedings of the 2009 IEEE international conference on Computer design
Adaptive inter-layer message routing in 3D networks-on-chip
Microprocessors & Microsystems
Analog Integrated Circuits and Signal Processing
Reliability-Aware Heterogeneous 3D Chip Multiprocessor Design
Journal of Electronic Testing: Theory and Applications
TSV redundancy: architecture and design issues in 3-D IC
IEEE Transactions on Very Large Scale Integration (VLSI) Systems
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This work proposes reliability aware through silicon via (TSV) planning for the 3D stacked silicon integrated circuits (ICs). The 3D power distribution network is modeled and extracted in frequency domain which includes the impact of skin effect. The worst case power noise of the 3D power delivery networks (PDN) with local TSV failures resulting from fabrication process or circuit operation is identified in both frequency and time domain. From the experimental results, it is observed that a single TSV failure could increase the maximum voltage variation up to 70% which should be considered in nanoscale ICs. The parameters of the 3D PDN are designed such that the power distribution is reliable under local TSV failures. The spatial distribution of the power noise, reliability and block out area is analyzed to enhance the reliability of the 3D PDN under local TSV failure.