Circuit design challenges in embedded memory and resistive RAM (RRAM) for mobile SoC and 3D-IC

  • Authors:
  • Meng-Fan Chang;Pi-Feng Chiu;Shyh-Shyuan Sheu

  • Affiliations:
  • National Tsing Hua University, Hsinchu, Taiwan;Industrial Technology Research Institute (ITRI), Chutung, Hsinchu, Taiwan;Industrial Technology Research Institute (ITRI), Chutung, Hsinchu, Taiwan

  • Venue:
  • Proceedings of the 16th Asia and South Pacific Design Automation Conference
  • Year:
  • 2011

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Abstract

Mobile systems require high-performance and low-power SoC or 3D-IC chips to perform complex operations, ensure a small form-factor and ensure a long battery life time. A low supply voltage (VDD) is frequently utilized to suppress dynamic power consumption, standby current, and thermal effects in SoC and 3D-IC. Furthermore, lowering the VDD reduces the voltage stress of the devices and slows the aging of chips. However, a low VDD for embedded memories can cause functional failure and low yield. This paper reviews various challenges in the design of low-voltage circuits for embedded memory (SRAM and ROM). It also discusses emerging embedded memory solutions. Alternative memory interfaces and architectures for mobile SoC and 3D-IC are also explored.