Device/circuit interactions at 22nm technology node
Proceedings of the 46th Annual Design Automation Conference
Novel dual-Vth independent-gate FinFET circuits
Proceedings of the 2010 Asia and South Pacific Design Automation Conference
Comparative evaluation of layout density in 3T, 4T, and MT FinFET standard cells
IEEE Transactions on Very Large Scale Integration (VLSI) Systems
Design space exploration of FinFET cache
ACM Journal on Emerging Technologies in Computing Systems (JETC)
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Independent control of front and back gate in double gate (DG) devices can be used to merge parallel transistors in noncritical paths. This reduces the effective switching capacitance and, hence, the dynamic power dissipation of a circuit. However, efficient design of large-scale circuits with DG devices is not well explored due to lack of proper modeling and large-scale design simulation tools. In this paper, we propose several low-power circuit options using independent gate FinFETs. We developed semianalytical models for different FinFET logic gates to predict their performance. An efficient circuit synthesis methodology comprised of proposed low-power logic options in FinFET design library has been developed. Results show about 8.5% area savings and 18% power savings over conventional FinFET technology for ISCAS85 benchmark circuits in 45-nm technology with no performance penalty.