Analysis and Design of Analog Integrated Circuits
Analysis and Design of Analog Integrated Circuits
Design guidelines of CMOS class-AB output stages: a tutorial
Analog Integrated Circuits and Signal Processing
0.9-V CMOS cascode amplifier with body-driven gain boosting
International Journal of Circuit Theory and Applications - ECCTD 2007
Tunable linear MOS resistors using quasi-floating-gate techniques
IEEE Transactions on Circuits and Systems II: Express Briefs
A 10 b 25 MS-s 4.8 mW 0.13 µm CMOS ADC with switched-bias power-reduction techniques
International Journal of Circuit Theory and Applications
Low-power design of CMOS baseband analog chain for direct conversion receiver
International Journal of Circuit Theory and Applications
International Journal of Circuit Theory and Applications
DC offset control with application in a zero-IF 0.18 μm CMOS Bluetooth receiver chain
Analog Integrated Circuits and Signal Processing
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A class AB version of the conventional super source follower (SSF) is described. The circuit greatly increases slew rate (SR) and current efficiency, maintaining the low distortion and low output resistance of the SSF. Class AB operation is achieved without extra power dissipation or supply requirements, and without bandwidth or noise degradation. The circuit can advantageously replace the SSF in a wide variety of analog systems, opening a new research line in analog design. To illustrate the widespread application of this cell, a class AB differential unity-gain buffer, a class AB differential current mirror and two class AB differential transconductors are designed, fabricated in a 0.5µm CMOS technology and tested. Measurement results using a dual supply of ±1.65V show that the proposed class AB version of the SSF improves SR by a factor 21.5 and increases bandwidth by 10%, keeping noise level, input range, power consumption, and supply requirements unaltered. The fabricated class AB current mirror features a THD at 100 kHz of − 62dB for signal currents 20 times larger than the bias current. The fabricated transconductors feature an IM3 at 1 MHz of − 56.6dB for output currents more than 13 times larger than the bias currents. Copyright © 2011 John Wiley & Sons, Ltd.