First integration of MOSFET band-to-band-tunneling current in BSIM4

Authors:
Fabrizio Ramundo;Paolo Nenzi;Mauro Olivieri
Affiliations:
DIET, Sapienza University of Rome, Italy;DIET, Sapienza University of Rome, Italy;DIET, Sapienza University of Rome, Italy
Venue:
Microelectronics Journal
Year:
2013

Citing 3
Cited 1

Fundamentals of modern VLSI devices

Fundamentals of modern VLSI devices
Leakage Power Analysis and Reduction for Nanoscale Circuits

IEEE Micro
Accurate estimation of total leakage in nanometer-scale bulk CMOS circuits based on device geometry and doping profile

IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems

Impact of technology scaling on leakage power in nano-scale bulk CMOS digital standard cells

Microelectronics Journal

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Abstract

Static leakage currents represent a major issue in nano-scale CMOS. In digital VLSI circuits, the most relevant contributions to the overall leakage current are subthreshold conduction, gate current and band-to-band-tunneling (BTBT) current, which flows from drain/source to bulk through the reverse biased diffusion junctions. While the latter has been recognized as an important effect in digital nano-CMOS, yet no compact model of it has ever been included in the industry-standard device model BSIM4. In this work, we show that the lack of a BTBT current model leads to discrepancies between SPICE and device-level simulations and that adding a BTBT current source into BSIM4 DC model can correct this. The new current source follows a widely accepted physical model of the BTBT phenomenon with a rectangular junction approximation. Test case results show a good agreement between the new circuit-level simulations and the device-level extracted currents.