Fundamentals of modern VLSI devices
Fundamentals of modern VLSI devices
MOSFET Models for VLSI Circuit Simulation: Theory and Practice
MOSFET Models for VLSI Circuit Simulation: Theory and Practice
Transistor-specific delay modeling for SSTA
Proceedings of the conference on Design, automation and test in Europe
Analysis and Design of Digital Integrated Circuits
Analysis and Design of Digital Integrated Circuits
An efficient delay model for MOS current-mode logic automated design and optimization
IEEE Transactions on Circuits and Systems Part I: Regular Papers
IEEE Transactions on Nanotechnology
IEEE Transactions on Nanotechnology
IEEE Transactions on Nanotechnology
CMOS Circuit Speed and Buffer Optimization
IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems
IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems
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Multi-channel (MC) gate-all-around (GAA) metal-oxide-semiconductor field-effect transistor (MOSFET) is one of the promising candidates for the next-generation high performance devices. However, due to fabrication imperfections the cross-section of GAA devices may be ellipse-shaped having different major (a) and minor (b) axes, instead of the theoretically ideal round shape. The aspect ratio (AR), defined as a/b, of such elliptical GAA devices can vary depending on a and b. This introduces variability in the effective diameter, which in turn affect the performance parameters of circuits based on elliptical GAA MOSFETs. In the present work we have investigated the impact of diameter variability on the transient response of MC elliptical GAA MOSFET based CMOS inverters with a novel perspective. We have modeled the spread in the effective diameter by a parameter, @s, the standard deviation (SD), which may be thought of as a quantitative measure of the amount of variability introduced in the device. We have elaborated the 'ON-Resistance' method for calculating the propagation delay of MC GAA MOSFET based CMOS inverters. Computations were carried out to show the dependence of the propagation delay of such inverters on some important device/circuit parameters. We have also shown that even long channel elliptical devices can offer significant reduction of circuit delay (comparable to short channel devices) by proper tuning the effective diameter and number of channels, provided the admissible small dimensional effects have been taken into account.