A comparative study of power efficient SRAM designs

  • Authors:
  • Jeyran Hezavei;N. Vijaykrishnan;M. J. Irwin

  • Affiliations:
  • 220 Pond Lab, Department of Computer Science & Engineering, Pennsylvania State University;220 Pond Lab, Department of Computer Science & Engineering, Pennsylvania State University;220 Pond Lab, Department of Computer Science & Engineering, Pennsylvania State University

  • Venue:
  • GLSVLSI '00 Proceedings of the 10th Great Lakes symposium on VLSI
  • Year:
  • 2000

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Abstract

This paper investigates the effectiveness of combination of different low power SRAM circuit design techniques. The divided bit line (DBL), pulsed word line (PWL) and isolated bit line (IBL) strategies have been implemented in a various size SRAM designs and evaluated using 0.35Micron technology and 3.3V VDD at 100MHz frequency. Different decoder structures have been investigated for their power efficiency as well. It is observed that the power reduces by 29%, 32% and 52% over an unoptimized SRAM design when (PWL+IBL), (PWL+DBL) and (PWL+IBL+DBL) are implemented in a 256*2 size SRAM respectively.