A fast simulation approach for inductive effects of VLSI interconnects

  • Authors:
  • Xiaoning Qi;Goetz Leonhardt;Daniel Flees;Xiao-Dong Yang;Sangwoo Kim;Stephan Mueller;Hendrik Mau;Lawrence T. Pileggi

  • Affiliations:
  • Sun Microsystems, Inc., Sunnyvale, CA;Sun Microsystems, Inc., Sunnyvale, CA;Sun Microsystems, Inc., Sunnyvale, CA;Sun Microsystems, Inc., Sunnyvale, CA;Sun Microsystems, Inc., Sunnyvale, CA;Sun Microsystems, Inc., Sunnyvale, CA;Sun Microsystems, Inc., Sunnyvale, CA;Carnegie Mellon University, Pittsburgh, PA

  • Venue:
  • Proceedings of the 13th ACM Great Lakes symposium on VLSI
  • Year:
  • 2003

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Abstract

Modeling on-chip inductive effects for interconnects of multi-gigahertz microprocessors remains challenging. SPICE simulation of these effects is very slow because of the large number of mutual inductances. Meanwhile, ignoring the non-linear behavior of drivers in a fast linear circuit simulator results in large errors for the inductive effect. In this paper, a fast and accurate time-domain transient analysis approach is presented, which captures the non-linearity of circuit drivers, the effect of non-ideal ground and de-coupling capacitors in a bus structure. The proposed method models the non-linearity of drivers in conjunction with specific bus geometries. Linearized waveforms at each driver output are incorporated into an interconnect reduced-order simulator for fast transient simulation. In addition, non-ideal ground and de-coupling capacitor models enable accurate signal and ground bounce simulations. Results show that this simulation approach is up-to 68x faster than SPICE while maintaining 95% accuracy.