On a New Way to Read Data from Memory

  • Authors:
  • David Samyde;Sergei Skorobogatov;Ross Anderson;Jean-Jacques Quisquater

  • Affiliations:
  • -;-;-;-

  • Venue:
  • SISW '02 Proceedings of the First International IEEE Security in Storage Workshop
  • Year:
  • 2002

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Abstract

This paper explains a new family of techniques to extract data from semiconductormemory, without using the read-out circuitryprovided for the purpose. What these techniques have in common is the use of semi-invasive probing methods to induce measurable changes in the analogue characteristics ofthe memory cells of interest. The basic ideais that when a memory cell, or read-out amplifier, is scanned appropriately with a laser,the resulting increase in leakage current depends on its state; the same happens whenwe induce an eddy current in a cell. Theseperturbations can be carried out at a levelthat does not modify the stored value, butstill enables it to be read out. Our techniques build on a number of recent advancesin semi-invasive attack techniques [1], lowtemperature data remanence [2,3], electromagnetic analysis [4] and eddy current induction [5]. They can be used against a widerange of memory structures, from registersthrough RAM to FLASH. We have demonstrated their practicality by reading out DESkeys stored in RAM without using the normalread-out circuits. This suggests that vendorsof products such as smartcards and securemicrocontrollers should review their memoryencryption, access control and other storagesecurity issues with care.