An Integrated CAD Methodology for Yield Enhancement of VLSI CMOS Circuits Including Statistical Device Variations

Authors:
Massimo Conti;Paolo Crippa;Simone Orcioni;Marcello Pesare;Claudio Turchetti;Loris Vendrame;Silvia Lucherini
Affiliations:
Dipartimento di Elettronica, Intelligenza Artificiale e Telecommunicazionis, Universita Politecnica deele Marche, Via Brecce Bianche, I-60131 Ancona, Italy;Dipartimento di Elettronica, Intelligenza Artificiale e Telecommunicazionis, Universita Politecnica deele Marche, Via Brecce Bianche, I-60131 Ancona, Italy. pcrippa@ea.unian.it;Dipartimento di Elettronica, Intelligenza Artificiale e Telecommunicazionis, Universita Politecnica deele Marche, Via Brecce Bianche, I-60131 Ancona, Italy;MPG Flash CAD STMicroelectronics, Via C. Olivetti 2, I-20041 Agrate Brianza, Italy;Dipartimento di Elettronica, Intelligenza Artificiale e Telecommunicazionis, Universita Politecnica deele Marche, Via Brecce Bianche, I-60131 Ancona, Italy;CR&D STMicroelectronics, Via C. Olivetti 2, I-20041 Agrate Brianza, Italy;CR&D STMicroelectronics, Via C. Olivetti 2, I-20041 Agrate Brianza, Italy
Venue:
Analog Integrated Circuits and Signal Processing
Year:
2003

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Abstract

In this paper a novel CAD methodology for yield enhancement of VLSI CMOS circuits including random device variations is presented. The methodology is based on a preliminary characterization of the technological process by means of specific test chips for accurate mismatch modeling. To this purpose, a very accurate position-dependent parameter mismatch model has been formulated and extracted. Finally a CAD tool implementing this model has been developed. The tool is fully integrated in an environment of existing commercial tools and it has been experimented in the STMicroelectronics Flash Memory CAD Group.As an example of application, a bandgap reference circuit has been considered and the results obtained from simulations have been compared with experimental data. Furthermore, the methodology has been applied to the read path of a complex Flash Memory produced by STMicroelectronics, consisting of about 16,000 MOSFETs. Measurements of electrical performances have confirmed the validity of the methodology, and the accuracy of both the mismatch model and the simulation flow.