Delay Testing of SOI Circuits: Challenges with the History Effect

  • Authors:
  • Eric MacDonald;Nur A. Touba

  • Affiliations:
  • -;-

  • Venue:
  • ITC '99 Proceedings of the 1999 IEEE International Test Conference
  • Year:
  • 1999

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Abstract

Testing Partially-Depleted Silicon-On-Insulator (PD-SOI)integrated circuits presents new challenges thatwere not concerns in previous bulk CMOS technologies.Gates are affected by a variation in delay based onthreshold voltage fluctuations. The fluctuations aredependent on the switching history of the device and thisposes a serious challenge with regard to testing delays.To ensure worst-case operation, pre-conditioning of thepath is necessary prior to a delay test. This paperprovides background on SOI device operation anddescribes why and how pre-conditioning is accomplishedIt is shown that a three-pattern delay test where the V1and V3 patterns are the same is required to pre-conditionthe path for worst-case delay. Two novel scan latchdesigns that are capable of applying the three-patterntests are presented.