Monte Carlo analysis of semiconductor devices: the DAMOCLES program

Experimental technology and performance of 0.1-&mgr;m-gate-length FETs operated at liquid nitrogen temperature

IBM Journal of Research and Development

Heterojunction FETs in III-V compounds

IBM Journal of Research and Development

Numerical modeling of advanced semiconductor devices

IBM Journal of Research and Development

CMOS scaling into the 21st century: 0.1 &mgr;m and beyond

IBM Journal of Research and Development - Special issue: IBM CMOS technology

Nanoscale CMOS circuit leakage power reduction by double-gate device

Proceedings of the 2004 international symposium on Low power electronics and design

CMOS design near the limit of scaling

IBM Journal of Research and Development

Simulation of nanoscale MOSFETs using modified drift-diffusion and hydrodynamic models and comparison with Monte Carlo results

Microelectronic Engineering

An efficient numerical approach to studying impact ionization in sub-micrometer devices

Journal of Computational Electronics