Interconnect and current density stress: an introduction to electromigration-aware design

Authors:
Jens Lienig
Affiliations:
Dresden University of Technology, Dresden, Germany
Venue:
Proceedings of the 2005 international workshop on System level interconnect prediction
Year:
2005

Citing 4
Cited 1

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Electromigration-aware dynamic routing algorithm for network-on-chip applications

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Abstract

Electromigration due to excessive current density stress in the interconnect can cause the premature failure of an electronic circuit. The ongoing reduction of circuit feature sizes has aggravated the problem over the last couple of years. It is therefore an important reliability issue to consider electromigration-related design parameters during interconnect design. In this tutorial, we give an introduction to the electromigration problem and its relationship to current density. We then present various physical design constraints that affect electromigration. Finally, we introduce components of an electromigration-aware physical design flow.