Array-based architecture for FET-based, nanoscale electronics
IEEE Transactions on Nanotechnology
Stochastic assembly of sublithographic nanoscale interfaces
IEEE Transactions on Nanotechnology
Evaluation of design strategies for stochastically assembled nanoarray memories
ACM Journal on Emerging Technologies in Computing Systems (JETC)
Radial addressing of nanowires
ACM Journal on Emerging Technologies in Computing Systems (JETC)
Nanowire addressing with randomized-contact decoders
Proceedings of the 2006 IEEE/ACM international conference on Computer-aided design
Nanowire addressing with randomized-contact decoders
Theoretical Computer Science
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A key challenge facing nanotechnologies will be controlling nanoarrays, two orthogonal sets of nanowires that form a crossbar, using a moderate number of mesoscale wires. Three methods have been proposed to use mesoscale wires to control individual nanowires. The first is based on nanowire differentiation during manufacture, the second makes random doped connections between nanowires and mesoscale wires, and the third, a mask-based approach, interposes high-K dielectric regions between nanowires and mesoscale wires. All three addressing schemes involve a stochastic step in their implementation. In this paper we analyze the mask-based approach and show that a large number of mesoscale control wires is necessary for its realization.