Design approaches for hybrid CMOS/molecular memory based on experimental device data

Authors:
Garrett S. Rose;Adam C. Cabe;Nadine Gergel-Hackett;Nabanita Majumdar;Mircea R. Stan;John C. Bean;Lloyd R. Harriott;Yuxing Yao;James M. Tour
Affiliations:
University of Virginia, Charlottesville, Virginia;University of Virginia, Charlottesville, Virginia;University of Virginia, Charlottesville, Virginia;University of Virginia, Charlottesville, Virginia;University of Virginia, Charlottesville, Virginia;University of Virginia, Charlottesville, Virginia;University of Virginia, Charlottesville, Virginia;Rice University, Houston, Texas;Rice University, Houston, Texas
Venue:
GLSVLSI '06 Proceedings of the 16th ACM Great Lakes symposium on VLSI
Year:
2006

Citing 2
Cited 3

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Abstract

In recent years many advances have been made in the development of molecular scale devices. Experimental data shows that these devices have potential for use in both memory and logic. This paper describes the challenges faced in building crossbar array based molecular memory, and develops a methodology to optimize molecular scale architectures based on experimental device data taken at room temperature. In particular, we discuss reading and writing such memory using CMOS and compiling a solution for easily reading device conductivity states (typically characterized by very small currents). Additionally, a metric is derived to determine the voltages for writing to the crossbar array. Simulation results, incorporating experimental device data, are presented using Cadence Spectre.