NanoFabrics: spatial computing using molecular electronics
ISCA '01 Proceedings of the 28th annual international symposium on Computer architecture
Array-based architecture for FET-based, nanoscale electronics
IEEE Transactions on Nanotechnology
Augmentation of SPICE for simulation of circuits containing resonant tunneling diodes
IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems
New RTD large-signal DC model suitable for PSPICE
IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems
Design approaches for hybrid CMOS/molecular memory based on experimental device data
GLSVLSI '06 Proceedings of the 16th ACM Great Lakes symposium on VLSI
Proceedings of the 17th ACM Great Lakes symposium on VLSI
Designing CMOS/molecular memories while considering device parameter variations
ACM Journal on Emerging Technologies in Computing Systems (JETC)
The effects of logic partitioning in a majority logic based CMOS-NANO FPGA
Proceedings of the 19th ACM Great Lakes symposium on VLSI
NanoV: nanowire-based VLSI design
Proceedings of the 2010 IEEE/ACM International Symposium on Nanoscale Architectures
Generalised threshold gate synthesis based on AND/OR/NOT representation of Boolean function
Proceedings of the 2010 Asia and South Pacific Design Automation Conference
Hi-index | 0.00 |
As the nanoelectronics field reaches the maturity needed for circuit-level integration, modeling approaches are needed that can capture nonclassical behaviors in a compact manner. This paper proposes a universal device model (UDM) for two-terminal devices that addresses the challenge of correctly balancing accuracy, complexity, and flexibility. The UDM qualitatively captures fundamental classical and quantum phenomena and enables nanoelectronic circuit design and simulation. We discuss the motivation behind this modeling approach as well as the underlying details of the model. Furthermore, we present a circuit example of the model in action.