Fundamentals of modern VLSI devices
Fundamentals of modern VLSI devices
IEEE Transactions on Very Large Scale Integration (VLSI) Systems
Nanometer MOSFET effects on the minimum-energy point of 45nm subthreshold logic
Proceedings of the 14th ACM/IEEE international symposium on Low power electronics and design
Low power circuit design based on heterojunction tunneling transistors (HETTs)
Proceedings of the 14th ACM/IEEE international symposium on Low power electronics and design
ACM Transactions on Design Automation of Electronic Systems (TODAES)
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Super cut-off devices with sub-60mV/decade subthreshold swings have recently been demonstrated and being extensively studied. This paper presents a feasibility analysis of such tunneling devices for ultralow power subthreshold logic. Analysis shows that this device can deliver 800X higher performance (@iso-IOFF) compared to a MOSFET. The possible use of this device as a sleep transistor in conjunction with the regular Si MOSFET shows 2000X average improvement in leakage power compared to Si MOSFETs.