Low power circuit design based on heterojunction tunneling transistors (HETTs)

  • Authors:
  • Daeyeon Kim;Yoonmyung Lee;Jin Cai;Isaac Lauer;Leland Chang;Steven J. Koester;Dennis Sylvester;David Blaauw

  • Affiliations:
  • University of Michigan, Ann Arbor, MI, USA;University of Michigan, Ann Arbor, MI, USA;IBM T. J. Watson Research Center, Yorktown Heights, NY, USA;IBM T. J. Watson Research Center, Yorktown Heights, NY, USA;IBM T. J. Watson Research Center, Yorktown Heights, NY, USA;IBM T. J. Watson Research Center, Yorktown Heights, NY, USA;University of Michigan, Ann Arbor, MI, USA;University of Michigan, Ann Arbor, MI, USA

  • Venue:
  • Proceedings of the 14th ACM/IEEE international symposium on Low power electronics and design
  • Year:
  • 2009

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Abstract

The theoretical lower limit of subthreshold swing in MOSFETs (60 mV/decade) significantly restricts low voltage operation since it results in a low ON to OFF current ratio at low supply voltages. This paper investigates extremely-low power circuits based on new Si/SiGe HEterojunction Tunneling Transistors (HETTs) that have subthreshold swing