Low Power Digital CMOS Design
Review and future prospects of low-voltage RAM circuits
IBM Journal of Research and Development
A 160 mV, fully differential, robust schmitt trigger based sub-threshold SRAM
ISLPED '07 Proceedings of the 2007 international symposium on Low power electronics and design
Process variation tolerant SRAM array for ultra low voltage applications
Proceedings of the 45th annual Design Automation Conference
Low power circuit design based on heterojunction tunneling transistors (HETTs)
Proceedings of the 14th ACM/IEEE international symposium on Low power electronics and design
A novel si-tunnel FET based SRAM design for ultra low-power 0.3V VDD applications
Proceedings of the 2010 Asia and South Pacific Design Automation Conference
An energy-efficient heterogeneous CMP based on hybrid TFET-CMOS cores
Proceedings of the 48th Design Automation Conference
Ultralow-Voltage Process-Variation-Tolerant Schmitt-Trigger-Based SRAM Design
IEEE Transactions on Very Large Scale Integration (VLSI) Systems
Design space exploration of workload-specific last-level caches
Proceedings of the 2012 ACM/IEEE international symposium on Low power electronics and design
Performance enhancement under power constraints using heterogeneous CMOS-TFET multicores
Proceedings of the eighth IEEE/ACM/IFIP international conference on Hardware/software codesign and system synthesis
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Steep sub-threshold Interband Tunnel FETs (TFETs) are promising candidates for low supply voltage applications with higher switching performance than traditional CMOS. Unlike CMOS, TFETs exhibit uni-directional conduction due to their asymmetric source-drain architecture, and delayed output saturation characteristics. These unconventional characteristics of TFETs pose a challenge for providing good read/write noise margin characteristics in TFET SRAMs. We provide an analysis of 8T and 10T TFET SRAM cells, including Schmitt-Trigger (ST) based cells, to address these shortcomings. By benchmarking a variety of TFET-based SRAM cells, we show the utility of the Schmitt-Trigger feedback mechanism in improving the read/write noise margins, thus enabling ultra low-VCC operation for TFET SRAMs. We also propose a variation model for studying the impact of device-level variation on TFET SRAM cells. We show that the TFET ST SRAM cell has sufficient variation tolerance to operate at low-VCC, and is a very promising cell to achieve a VCC-min of 124mV. The TFET ST cell operating at its VCC-min provides a 1.2x reduction in dynamic energy and 13x reduction in leakage power compared to the best CMOS-based SRAM implementation operating at it's VCC-min, while giving better performance at the same time.