Reliability computer-aided design tool for full-chip electromigration analysis and comparison with different interconnect metallizations

Authors:
Syed M. Alam;Chee Lip Gan;Carl V. Thompson;Donald E. Troxel
Affiliations:
Freescale Semiconductor Inc., Austin, Texas, USA;Nanyang Technological University, Singapore, Singapore;Massachusetts Institute of Technology, Cambridge, Massachusetts, USA;Massachusetts Institute of Technology, Cambridge, Massachusetts, USA
Venue:
Microelectronics Journal
Year:
2007

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Abstract

We have developed a set of methodologies for thermal aware circuit-level reliability analysis with either Al or Cu metallization in a circuit layout and implemented it in a public domain reliability CAD tool, SysRel. SysRel utilizes a hierarchical reliability analysis flow, with interconnect trees treated as the fundamental reliability unit, that sufficiently captures the differences in electromigration failure between Al and Cu metallizations. Under similar test conditions, the electromigration reliability of Al and Cu interconnect trees demonstrates significant differences because of the differences in interconnect architectural schemes. Using the best estimates of material parameters and an analytical model, we present a detail comparison of electromigration reliability of a sample test-structure as well as of actual circuit layouts with Al and Cu dual-damascene interconnect systems. We also demonstrate fast thermal-analysis in SysRel for circuit performance driven chip-level reliability assessment.