Fundamentals of modern VLSI devices
Fundamentals of modern VLSI devices
Building a high-performance, programmable secure coprocessor
Computer Networks: The International Journal of Computer and Telecommunications Networking - Special issue on computer network security
Cleaning policies in mobile computers using flash memory
Journal of Systems and Software
IEEE Spectrum
Low Cost Attacks on Tamper Resistant Devices
Proceedings of the 5th International Workshop on Security Protocols
A High-Speed Small RSA Encryption LSI with Low Power Dissipation
ISW '97 Proceedings of the First International Workshop on Information Security
Iddq Testing for High Performance CMOS - The Next Ten Years
EDTC '96 Proceedings of the 1996 European conference on Design and Test
A flash-memory based file system
TCON'95 Proceedings of the USENIX 1995 Technical Conference Proceedings
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A paper published in 1996 examined the problems involved in truly deleting data from magnetic storage media and also made a mention of the fact that similar problems affect data held in semiconductor memory. This work extends the brief coverage of this area given in the earlier paper by providing the technical background information necessary to understand remanence issues in semiconductor devices. Data remanence problems affect not only obvious areas such as RAM and non-volatile memory cells but can also occur in other areas of the device through hot-carrier effects (which change the characteristics of the semiconductors in the device), electromigration (which physically alter the device itself), and various other effects which are examined alongside the more obvious memory-cell remanence problems. The paper concludes with some design and device usage guidelines which can be useful in reducing remanence effects.