A low-power and high-gain fully integrated CMOS LNA

Authors:
S. Toofan;A. R. Rahmati;A. Abrishamifar;G. Roientan Lahiji
Affiliations:
Electrical Engineering Department, Iran University of Science and Technology, Iran;Electrical Engineering Department, Iran University of Science and Technology, Iran;Electrical Engineering Department, Iran University of Science and Technology, Iran;Electrical Engineering Department, Iran University of Science and Technology, Iran
Venue:
Microelectronics Journal
Year:
2007

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Abstract

In this paper, we present the design of a fully integrated CMOS low noise amplifier (LNA) with on-chip spiral inductors in 0.18@mm CMOS technology for 2.4GHz frequency range. Using cascode configuration, lower power consumption with higher voltage and power gain are achieved. In this configuration, we managed to have a good trade off among low noise, high gain, and stability. Using common-gate (CG) configuration, we reduced the parasitic effects of C"g"d and therefore alleviated the stability and linearity of the amplifier. This configuration provides more reverse isolation that is also important in LNA design. The LNA presented here offers a good noise performance. Complete simulation analysis of the circuit results in center frequency of 2.4GHz, with 37.6dB voltage gain, 2.3dB noise figure (NF), 50@W input impedance, 450MHz 3dB power bandwidth, 11.2dB power gain (S"2"1), high reverse isolation (S"1"2)