A Tuned Wideband LNA in 0.25µm IBM Process For RF Communication Applications
VLSID '04 Proceedings of the 17th International Conference on VLSI Design
A low-power and high-gain fully integrated CMOS LNA
Microelectronics Journal
Design of a 1.8 GHz low-noise amplifier for RF front-end in a 0.8 μm CMOS technology
IEEE Transactions on Consumer Electronics
A High linearity CMOS low noise amplifier for 3.66GHz applications using current-reused topology
Microelectronics Journal
Wideband and multiband CMOS LNAs: State-of-the-art and future prospects
Microelectronics Journal
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In this paper we present a fully integrated current reuse CMOS LNA (low noise amplifier) with modified input matching circuitry and inductive inter-stage architecture in 0.18@mm CMOS technology. To reduce the large spiral inductors that actually require larger surface area for their fabrication, two parallel LC circuits are used with two small spiral on-chip inductors. Using cascode configuration equipped by parallel inter-stage LCs, we achieved lower power consumption with higher power gain. In this configuration we used two cascoded transistors to have a good output swing suitable for low voltage technology compared to other current reuse configurations. This configuration provides better input matching, lower noise figure and more reverse isolation which is vital in LNA design. Complete analytical simulation of the circuit results in center frequency of 5.5GHz, with 1.9dB NF, 50@W input impedance, 1GHz 3dB power bandwidth, 20.5dB power gain (S"2"1), high reverse isolation (S"1"2)