Microelectronic circuits, 2nd ed.
Microelectronic circuits, 2nd ed.
Microelectronic circuits and devices
Microelectronic circuits and devices
Operation and Modeling of the Mos Transistor (The Oxford Series in Electrical and Computer Engineering)
Microelectronic Circuit Analysis and Design
Microelectronic Circuit Analysis and Design
CMOS Digital Integrated Circuits Analysis & Design
CMOS Digital Integrated Circuits Analysis & Design
The impact of MOSFET's physical parameters on its threshold voltage
MINO'07 Proceedings of the 6th conference on Microelectronics, nanoelectronics, optoelectronics
Influence of the driver and active load threshold voltage in design of pseudo-NMOS logic
ICC'10 Proceedings of the 14th WSEAS international conference on Circuits
Role of driver and load transistor (MOSFET) parameters on pseudo-NMOS logic design
WSEAS Transactions on Circuits and Systems
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The aim of this paper is to calculate the MOSFET parasitic capacitances, and then based on the results obtained we can further see the impact of MOSFET physical parameters on these parasitic capacitances. These capacitances have a direct impact in the speed of operation of MOSFET circuits. Therefore, in order to increase the speed of operation, it is necessary that the parasitic capacitances are reduced to a minimum possible level that the technological process allows. We have analyzed the gate capacitance effect and junction capacitances as a function of the MOSFET dimensions.