The impact of MOSFET's physical parameters on its threshold voltage

Authors:
Milaim Zabeli;Nebi Caka;Myzafere Limani;Qamil Kabashi
Affiliations:
Faculty of Electrical and Computer Engineering, University of Prishtina, Prishtina, Kosova;Faculty of Electrical and Computer Engineering, University of Prishtina, Prishtina, Kosova;Faculty of Electrical and Computer Engineering, University of Prishtina, Prishtina, Kosova;Faculty of Electrical and Computer Engineering, University of Prishtina, Prishtina, Kosova
Venue:
MINO'07 Proceedings of the 6th conference on Microelectronics, nanoelectronics, optoelectronics
Year:
2007

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Abstract

The aim of this paper is to research the impact of physical parameters which characterize the MOSFET transistors structure on the threshold voltage value. It is also analysed the role of substrate (the body effect) on the threshold voltage. The MOSFET threshold voltage value will have influence in the dynamic and static work regime (mode) of device. Based on the results obtained we can further see impact of each single physical parameter on the total value of threshold voltage. Moreover we can see which of these parameters will have significant and small impact on the threshold voltage. Hence, considering we can adjust the values of MOSFET physical parameters to reach the accepted threshold voltage.