Compound-Poisson Software Reliability Model
IEEE Transactions on Software Engineering
Soft Errors in Advanced Computer Systems
IEEE Design & Test
Markov Models of Fault-Tolerant Memory Systems under SEU
MTDT '04 Proceedings of the Records of the 2004 International Workshop on Memory Technology, Design and Testing
Circuit optimization techniques to mitigate the effects of soft errors in combinational logic
ACM Transactions on Design Automation of Electronic Systems (TODAES)
Matrix codes for reliable and cost efficient memory chips
IEEE Transactions on Very Large Scale Integration (VLSI) Systems
Designing ad-hoc scrubbing sequences to improve memory reliability against soft errors
Proceedings of the 48th Design Automation Conference
A layout-based approach for multiple event transient analysis
Proceedings of the 50th Annual Design Automation Conference
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Soft errors induced by radiation are an increasing problem in the microelectronic field. Although traditional models estimate the reliability of memories suffering Single Event Upsets (SEUs), Multiple Bit Upsets (MBUs) are becoming more and more important as technology scales. In this paper, a model that deals with MBUs in memory systems, which allows calculating reliability in a fast way similar to the SEU case, has been used to analyze the Mean Time To Failure (MTTF) of a 150 nm device under radiation. This analysis illustrates the importance that physical factors, as the energy, have on the system reliability.