Efficient implementation of decoupling capacitors in 3D processor-dram integrated computing systems

  • Authors:
  • Qi Wu;Jian-Qiang Lu;Ken Rose;Tong Zhang

  • Affiliations:
  • Rensselaer Polytechnic Institute, Troy, NY, USA;Rensselaer Polytechnic Institute, Troy, NY, USA;Rensselaer Polytechnic Institute, Troy, NY, USA;Rensselaer Polytechnic Institute, Troy, NY, USA

  • Venue:
  • Proceedings of the 19th ACM Great Lakes symposium on VLSI
  • Year:
  • 2009

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Abstract

Three-dimensional (3D) integration of a single high performance microprocessor die and multiple DRAM dies has been considered as a viable option to tackle the looming memory wall problem. Meanwhile, on-chip decoupling capacitors are becoming increasingly important to ensure power delivery integrity, particularly for high-performance integrated circuits. Targeting at 3D processor-DRAM integrated computing systems, this paper proposes to use 3D stacked DRAM dies to provide decoupling capacitors for the processor die. This can well leverage the superior capacitor fabrication ability of DRAM to eliminate the area penalty of decoupling capacitor insertion on the processor die. For its practical implementation, a simple uniform decoupling capacitor network design strategy is presented, and circuit SPICE simulations and computer system simulations are carried out to quantitatively demonstrate the effectiveness and illustrate various design trade-offs.