Die Stacking (3D) Microarchitecture

• Authors: Bryan Black;Murali Annavaram;Ned Brekelbaum;John DeVale;Lei Jiang;Gabriel H. Loh;Don McCaule;Pat Morrow;Donald W. Nelson;Daniel Pantuso;Paul Reed;Jeff Rupley;Sadasivan Shankar;John Shen;Clair Webb
• Venue: Proceedings of the 39th Annual IEEE/ACM International Symposium on Microarchitecture
• Year: 2006

3D die stacking is an exciting new technology that increases transistor density by vertically integrating two or more die with a dense, high-speed interface. The result of 3D die stacking is a significant reduction of interconnect both within a die and across dies in a system. For instance, blocks within a microprocessor can be placed vertically on multiple die to reduce block to block wire distance, latency, and power. Disparate Si technologies can also be combined in a 3D die stack, such as DRAM stacked on a CPU, resulting in lower power higher BW and lower latency interfaces, without concern for technology integration into a single process flow. 3D has the potential to change processor design constraints by providing substantial power and performance benefits. Despite the promising advantages of 3D, there is significant concern for thermal impact. In this research, we study the performance advantages and thermal challenges of two forms of die stacking: Stacking a large DRAM or SRAM cache on a microprocessor and dividing a traditional microarchitecture between two die in a stack Results: It is shown that a 32MB 3D stacked DRAM cache can reduce the cycles per memory access of a twothreaded RMS benchmark on average by 13% and as much as 55% while increasing the peak temperature by a negligible 0.08潞C. Off-die BW and power are also reduced by 66% on average. It is also shown that a 3D floorplan of a high performance microprocessor can simultaneously reduce power 15% and increase performance 15% with a small 14潞C increase in peak temperature. Voltage scaling can reach neutral thermals with a simultaneous 34% power reduction and 8% performance improvement.