Predicting the worst-case voltage violation in a 3D power network

Authors:
Wanping Zhang;Wenjian Yu;Xiang Hu;Amirali Shayan;A. Ege Engin;Chung-Kuan Cheng
Affiliations:
Qualcomm Inc., San Diego, CA, USA and UC San Diego, La Jolla, CA, USA;Tsinghua University, Beijing, China;UC San Diego, La Jolla, CA, USA;UC San Diego, La Jolla, CA, USA;San Diego State University, San Diego, CA, USA;UC San Diego, La Jolla, CA, USA
Venue:
Proceedings of the 11th international workshop on System level interconnect prediction
Year:
2009

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Abstract

This paper proposes an efficient method to predict the worst case of voltage violation by multi-domain clock gating in a three-dimensional (3D) on-chip power network considering leakage current. We first describe the 3D Power Distribution Network (PDN) structure which includes on-chip inductance and through-silicon-vias (TSV). The analysis flow using a superposition technique will be introduced later on. Then, we propose a general model to identify the worst-case gating pattern and the maximum variation area with arbitrary leakage current. For low power wireless chips, we introduce another simplified model, which treats the leakage to be a DC current. We formulate these two models with integer linear programming (ILP). The ILP based method is significantly faster than a conventional method based on enumeration. The experimental results also show that the noise contributed by leakage current is not negligible.