Hot-electron dynamics in SiO2 and the degradation of the Si/SiO2-interface
Infos'93 Proceedings of the 8th biennial conference on Insulating films on semiconductors
CMOS scaling into the 21st century: 0.1 &mgr;m and beyond
IBM Journal of Research and Development - Special issue: IBM CMOS technology
Fundamentals of modern VLSI devices
Fundamentals of modern VLSI devices
Nitrous oxide (N2O) processing for silicon oxynitride gate dielectrics
IBM Journal of Research and Development
IBM Journal of Research and Development - Advanced silicon technology
(Ba,Sr)TiO3 dielectrics for future stacked- capacitor DRAM
IBM Journal of Research and Development
Beyond the conventional transistor
IBM Journal of Research and Development
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In this paper a review of the more "fundamental" concerns regarding the scaling of the gate dielectric in the ultrathin regime is presented. Material issues are discussed pertaining to the integration of silicon oxynitride and oxide/nitride stacked layers and how such films might reduce or minimize boron penetration problems and address leakage current and reliability concerns. A methodology is presented to calculate device and chip lifetimes for MOS structures on the basis of data extracted from voltage- and temperature-accelerated measurements. Some integration issues regarding higher-k materials are also discussed because of their ability to solve the scaling problem. However, difficulties are involved in integrating them into a CMOS process flow.