Advanced high-κ dielectric stacks with polySi and metal gates: recent progress and current challenges

Authors:
E. P. Gusev;V. Narayanan;M. M. Frank
Affiliations:
-;-;-
Venue:
IBM Journal of Research and Development - Advanced silicon technology
Year:
2006

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Abstract

The paper reviews our recent progress and current challenges in implementing advanced gate stacks composed of high-κ dielectric materials and metal gates in mainstream Si CMOS technology. In particular, we address stacks of doped polySi gate electrodes on ultrathin layers of high-κ dielectrics, dual-workfunction metal-gate technology, and fully silicided gates. Materials and device characterization, processing, and integration issues are discussed.