Nanometer device scaling in subthreshold circuits

Authors:
Scott Hanson;Mingoo Seok;Dennis Sylvester;David Blaauw
Affiliations:
University of Michigan, Ann Arbor, MI;University of Michigan, Ann Arbor, MI;University of Michigan, Ann Arbor, MI;University of Michigan, Ann Arbor, MI
Venue:
Proceedings of the 44th annual Design Automation Conference
Year:
2007

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Abstract

Subthreshold circuit design is a strong candidate for use in future low power applications. It is not clear, however, that device scaling to 45nm and beyond will be beneficial in Subthreshold circuits. We investigate the implications of device scaling on subthreshold circuits and find that the slow scaling of gate oxide thickness leads to a 60% reduction in Ion/Ioff between the 90nm and 32nm device generations. We highlight the effects of this device degradation on noise margins, delay, and energy. We subsequently propose an alternative scaling strategy and demonstrate significant improvements in noise margins, delay, and energy in sub-Vth circuits.