RTL power modeling and estimation of sleep transistor based power gating

  • Authors:
  • Sven Rosinger;Domenik Helms;Wolfgang Nebel

  • Affiliations:
  • (Correspd. E-mail: rosinger@offis.de) OFFIS Research Institute, D-26121 Oldenburg, Germany;OFFIS Research Institute, D-26121 Oldenburg, Germany;University of Oldenburg, D-26121 Oldenburg, Germany

  • Venue:
  • Journal of Embedded Computing - PATMOS 2007 selected papers on low power electronics
  • Year:
  • 2009

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Abstract

We present an accurate RT level estimation methodology describing the power consumption of a component under power gating. By developing separate models for the on- and off-state and the transition cost between them, we can limit errors to below 10% compared to SPICE. The models support several implementation styles of power gating as NMOS/PMOS or Super-Cutoff. Additionally the models can be used to size the sleep transistors more accurate. We show, how the models can be integrated into a high level power estimation framework supporting design space exploration for several design for leakage methodologies.