Operation and modeling of the MOS transistor
Operation and modeling of the MOS transistor
Parameter extraction for PSP MOSFET model using hierarchical particle swarm optimization
Engineering Applications of Artificial Intelligence
Beyond the conventional transistor
IBM Journal of Research and Development
A hierarchical particle swarm optimizer and its adaptive variant
IEEE Transactions on Systems, Man, and Cybernetics, Part B: Cybernetics
A new public-domain program for mixed-signal simulation
IEEE Transactions on Education
MOS table models for circuit simulation
IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems
Template-based MOSFET device model
IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems
A table-based approach to study the impact of process variations on finfet circuit performance
IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems
A novel architecture for improving slew rate in FinFET-based op-amps and OTAs
Microelectronics Journal
Proceedings of the 48th Design Automation Conference
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A new lookup-table (LUT) approach, based on normalization of the drain current with an ID-VG template, is proposed for simulation of MOS transistor circuits. The LUT approach is validated by considering two examples and by comparing the LUT results with mixed-mode (device-circuit) simulation results. This approach is implemented in a circuit simulator and integrated, for the first time, with an optimizer to enable efficient design of circuits, particularly those involving novel technologies for which compact models are not fully developed. Three FinFET-based circuits are designed to demonstrate the effectiveness of the proposed environment. Furthermore, it is shown that the table-based platform can take into account variations in process, supply voltage, and temperature during the design.