Operation and modeling of the MOS transistor
Operation and modeling of the MOS transistor
ISQED '08 Proceedings of the 9th international symposium on Quality Electronic Design
Automated design and optimization of circuits in emerging technologies
Proceedings of the 2009 Asia and South Pacific Design Automation Conference
Beyond the conventional transistor
IBM Journal of Research and Development
A novel table-based approach for design of FinFET circuits
IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems
IEEE Transactions on Nanotechnology
A new public-domain program for mixed-signal simulation
IEEE Transactions on Education
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This paper presents a novel table-based approach for efficient statistical analysis of Finfield effect transistor circuits. The proposed approach uses a new scheme for interpolation of look-up tables (LUTs) with respect to process parameters. The effect of various process parameters, viz., channel length, fin width, and effective oxide thickness is studied for three circuits: buffer chain, static random access memory cell, and high-gain low-voltage op-amp. Compared to mixed-mode (device-circuit) simulation, the proposed LUT-based approach is shown to be much faster, thus making it practically a feasible and attractive option for variability analysis especially for emerging technologies where compact models are not available for circuit simulation.