FinFET SRAM " Device and Circuit Design Considerations
ISQED '04 Proceedings of the 5th International Symposium on Quality Electronic Design
ISLPED '05 Proceedings of the 2005 international symposium on Low power electronics and design
ISQED '07 Proceedings of the 8th International Symposium on Quality Electronic Design
VLSID '07 Proceedings of the 20th International Conference on VLSI Design held jointly with 6th International Conference: Embedded Systems
Process Variation Tolerant 3T1D-Based Cache Architectures
Proceedings of the 40th Annual IEEE/ACM International Symposium on Microarchitecture
Fault modeling for FinFET circuits
Proceedings of the 2010 IEEE/ACM International Symposium on Nanoscale Architectures
Gated-diode FinFET DRAMs: Device and circuit design-considerations
ACM Journal on Emerging Technologies in Computing Systems (JETC)
Impact of positive bias temperature instability (PBTI) on 3T1D-DRAM cells
Proceedings of the 21st edition of the great lakes symposium on Great lakes symposium on VLSI
Impact of positive bias temperature instability (PBTI) on 3T1D-DRAM cells
Integration, the VLSI Journal
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Scaling bulk CMOS SRAM technology for on-chip caches beyond the 22nm node is questionable, on account of high leakage power consumption, performance degradation, and instability due to process variations. Recently, two/three transistor one gated-diode (2T/3T1D) DRAMs were proposed as alternatives to address the SRAM variability problem, with an emphasis on high-activity embedded cache applications. They are highly competitive with an SRAM in terms of performance, while having a smaller power and area footprint at lower technology nodes. The current evolutionary trend in transistor structures is toward an era of multi-gate devices, which makes it necessary to identify design issues and advantages of gated-diode DRAMs implemented in a multi-gate technology. In this work, we address gated-diode DRAM design in FinFET technology using mixed-mode 2D-device simulations. We revisit the model of internal voltage gain in bulk gated-diodes and extend it to provide quantitative insight into designing Fin gated-diodes, i.e., gated-diodes in FinFET technology. To this effect, we propose FinFET variants of the bulk gated-diode configuration and identify parameters that are critical to enhancing the retention time and read current in 2T/3T1D FinFET DRAMs. Additionally, we show the superiority of 2T1D FinFET DRAM over 6T FinFET SRAM having pass-gate feedback (6T PGFB) and 2T1D bulk DRAM under the effect of variations using a quasi-Monte Carlo method implemented in FinE, an environment we have developed for double-gate circuit design that integrates Sentaurus TCAD from Synopsys with the Spice3- UFDG double-gate compact model from University of Florida under a single framework. Finally, we present a new tunable threshold gated-diode FinFET amplifier which uses an n-type gated-diode for voltage-boosting, along with a p-type gated-diode for zero-suppression.